小弟最近做了一个两个通电螺旋管三维电磁场分析与计算,但是结果并不循环对称,与2维结果的差别很大;为了降低计算规模,采用整个模型的1/12也就是30度来分析模型和分析步骤如下;
1、首先建两个30度的圆柱模型,然后再建一个30度的近场扇形圆和一个远场扇形圆;
2、利用mesh200划分两个切面,并且利用CPCYC命令建立循环边界条件;
3、施加远场边界条件和磁力线平行边界条件,对两个螺旋管施加环向电流密度,然后求解
求解出现的问题:
1、径向磁场和轴向磁场完全循环对称,环向磁场有点不对称;
2、径向洛仑兹力不循环对称,而轴向磁场却完全循环对称,
不知问题出在什么地方,我希望能够将洛仑兹力作为结构分析的载荷,进行结构耦合分析看线圈的变形,如果洛仑兹力计算不正确,则结构分析肯定也不正确,望高手指点;
命令流如下;
/BATCH
/COM,ANSYS RELEASE 9.0 UP20041104 09:36:42 12/29/2007
/input,menust,tmp,'',,,,,,,,,,,,,,,,1
/GRA,POWER
/GST,ON
/PLO,INFO,3
/GRO,CURL,ON
/CPLANE,1
/REPLOT,RESIZE
WPSTYLE,,,,,,,,0
n1=2865 !初级线圈匝数
x1=0.0858/2 !初级线圈内半径
x2=0.114/2 !初级线圈外半径
l1=0.18 !初级线圈高度
n2=4 !次级线圈总匝数
x3=0.062 !次级线圈内半径
x4=0.0803 !次级线圈外半径
l2=0.18 !次级线圈总高度
i1=90 !初级线圈正的最大电流值
i3=50000 !次级线圈最大电流值
js11=n1*i1/(x2*l1-x1*l1) !初级线圈电流密度
js2=n2*i3/(x4*l2-x3*l2) !次级线圈电流密度
/PREP7
CYLIND,x1,x2,-l1/2,l1/2,0,30, !初级线圈
CYLIND,x3,x4,-l2/2,l2/2,0,30, !次级铠甲
SPHERE,0.2,0,0,30, !近场
SPHERE,0.3,0,0,30, !远场
FLST,2,4,6,ORDE,2
FITEM,2,1
FITEM,2,-4
VOVLAP,P51X !overlap操作
NUMCMP,ALL !压缩模型数目
ET,1,SOLID97 !定义线圈单元类型
ET,2,SOLID97 !定义空气单元类型
ET,3,MESH200 !定义mesh200单元(用于划分网格和循环对称边界条件,扇形低边界)
KEYOPT,3,1,6
KEYOPT,3,2,0
CSYS,1 !将当前坐标系激活为全局柱坐标系
MPTEMP,,,,,,,, !定义初级线圈材料属性
MPTEMP,1,0
MPDATA,MURX,1,,1
MPTEMP,,,,,,,, !定义次级线圈材料属性
MPTEMP,1,0
MPDATA,MURX,2,,1
MPTEMP,,,,,,,, !定义近场材料属性
MPTEMP,1,0
MPDATA,MURX,3,,1
MPTEMP,,,,,,,, !定义远场材料属性
MPTEMP,1,0
MPDATA,MURX,4,,1
VPLOT
/VIEW,1,,-1
/ANG,1
/REP,FAST
CM,_Y,VOLU
VSEL, , , , 1 !选择volume1
CM,_Y1,VOLU
CMSEL,S,_Y
CMSEL,S,_Y1
VATT, 1, , 1, 0 !分配初级线圈属性
CMSEL,S,_Y
CMDELE,_Y
CMDELE,_Y1
CM,_Y,VOLU
VSEL, , , , 2 !选择volume2
CM,_Y1,VOLU
CMSEL,S,_Y
CMSEL,S,_Y1
VATT, 2, , 1, 0 !分配次级线圈属性
CMSEL,S,_Y
CMDELE,_Y
CMDELE,_Y1
CM,_Y,VOLU
VSEL, , , , 4 !选择volume4
CM,_Y1,VOLU
CMSEL,S,_Y
CMSEL,S,_Y1
VATT, 3, , 2, 0 !分配近场属性
CMSEL,S,_Y
CMDELE,_Y
CMDELE,_Y1
CM,_Y,VOLU
VSEL, , , , 3 !选择volume4
CM,_Y1,VOLU
CMSEL,S,_Y
CMSEL,S,_Y1
VATT, 4, , 2, 0 !分配远场属性
CMSEL,S,_Y
CMDELE,_Y
CMDELE,_Y1
FLST,5,4,5,ORDE,4 !选择area5,11,17,23,27,29,也就是扇形区域得低边界
FITEM,5,5
FITEM,5,11
FITEM,5,15
FITEM,5,17
CM,_Y,AREA
ASEL, , , ,P51X
CM,_Y1,AREA
CMSEL,S,_Y
CMSEL,S,_Y1
AATT, 1, , 3, 0, !将扇形区域的低边界的单元属性设为mesh200,有利于建立循环边界条件
CMSEL,S,_Y
CMDELE,_Y
CMDELE,_Y1
FLST,5,4,5,ORDE,4 !选择area5,11,17,23,27,29,也就是扇形区域得低边界
FITEM,5,5
FITEM,5,11
FITEM,5,15
FITEM,5,17
ASEL,S, , ,P51X
LSLA,S
LPLOT
/PNUM,KP,0
/PNUM,LINE,1 !显示line数目
/PNUM,AREA,0
/PNUM,VOLU,0
/PNUM,NODE,0
/PNUM,TABN,0
/PNUM,SVAL,0
/NUMBER,0
/PNUM,ELEM,0
/REPLOT
FLST,5,4,4,ORDE,4 ! 设置低边界划分网格的大小
FITEM,5,25
FITEM,5,-26
FITEM,5,30
FITEM,5,-31
CM,_Y,LINE
LSEL, , , ,P51X
CM,_Y1,LINE
CMSEL,,_Y
LESIZE,_Y1, , ,20, , , , ,1
FLST,5,2,4,ORDE,2
FITEM,5,34
FITEM,5,-35
CM,_Y,LINE
LSEL, , , ,P51X
CM,_Y1,LINE
CMSEL,,_Y
LESIZE,_Y1, , ,8, , , , ,1
FLST,5,1,4,ORDE,1
FITEM,5,29
CM,_Y,LINE
LSEL, , , ,P51X
CM,_Y1,LINE
CMSEL,,_Y
LESIZE,_Y1, , ,160, , , , ,1
FLST,5,4,4,ORDE,4
FITEM,5,1
FITEM,5,8
FITEM,5,13
FITEM,5,20
CM,_Y,LINE
LSEL, , , ,P51X
CM,_Y1,LINE
CMSEL,,_Y
LESIZE,_Y1, , ,10, , , , ,1
FLST,5,4,4,ORDE,4
FITEM,5,10
FITEM,5,12
FITEM,5,22
FITEM,5,24
CM,_Y,LINE
LSEL, , , ,P51X
CM,_Y1,LINE
CMSEL,,_Y
LESIZE,_Y1, , ,30, , , , ,1
MSHAPE,0,2D
MSHKEY,1
CM,_Y,AREA
ASEL, , , , 5 !划分低维扇形切面
CM,_Y1,AREA
CHKMSH,'AREA'
CMSEL,S,_Y
AMESH,_Y1
CMDELE,_Y
CMDELE,_Y1
CMDELE,_Y2
CM,_Y,AREA
ASEL, , , , 11
CM,_Y1,AREA
CHKMSH,'AREA'
CMSEL,S,_Y
AMESH,_Y1
CMDELE,_Y
CMDELE,_Y1
CMDELE,_Y2
MSHAPE,1,2D
MSHKEY,0
CM,_Y,AREA
ASEL, , , , 15
CM,_Y1,AREA
CHKMSH,'AREA'
CMSEL,S,_Y
AMESH,_Y1
CMDELE,_Y
CMDELE,_Y1
CMDELE,_Y2
CM,_Y,AREA
ASEL, , , , 17
CM,_Y1,AREA
CHKMSH,'AREA'
CMSEL,S,_Y
AMESH,_Y1
CMDELE,_Y
CMDELE,_Y1
CMDELE,_Y2
ALLSEL,ALL !选择全部
VPLOT
MSHCOPY,AREA,5,6,1,0,30,0,0.0001, , !将area5拷贝到area6
MSHCOPY,AREA,11,12,1,0,30,0,0.0001, , !将area11拷贝到area12
MSHCOPY,AREA,17,18,1,0,30,0,0.0001, , !将area17拷贝到area18
MSHCOPY,AREA,15,16,1,0,30,0,0.0001, , !将area15拷贝到area16
ALLSEL,ALL !选择全部
VSWEEP,1 !划分磁体1,2,因为这些体的低维切面划分的单元都是8节点6边形
VSWEEP,2
MSHAPE,1,3D
CM,_Y,VOLU
VSEL, , , , 3 !划分远场体
CM,_Y1,VOLU
CHKMSH,'VOLU'
CMSEL,S,_Y
VMESH,_Y1
CMDELE,_Y
CMDELE,_Y1
CMDELE,_Y2
CM,_Y,VOLU
VSEL, , , , 4 !划分近场体
CM,_Y1,VOLU
CHKMSH,'VOLU'
CMSEL,S,_Y
VMESH,_Y1
CMDELE,_Y
CMDELE,_Y1
CMDELE,_Y2
ALLSEL,ALL
EPLOT
ALLSEL,ALL
PHYSICS,WRITE,EMAG, , , !写分析物理环境
LOCAL,11,1,0,0,0, , , ,1,1, !创建局部柱坐标系11
ESEL,S,MAT,,1,2,1 !选择磁体单元
FLST,2,12980,2,ORDE,2
FITEM,2,1
FITEM,2,-12980
EMODIF,P51X,ESYS,1, !修改磁体单元为局部柱坐标系11
ALLSEL,ALL
CSYS,1 !将当前坐标系激活为全局柱坐标系
NROTAT,ALL !旋转节点坐标系到当前全局柱坐标系
CPCYC,ALL,0.0001,1,0,30,0,0 !将低维和高维对应的节点耦合起来,形成循环对称条件
ANTYPE,0
NROPT,AUTO, ,
STAOPT,DEFA !选择求解器sparse
EQSLV,SPAR, ,0,
PRECISION,0
MSAVE,0
PCGOPT,0, ,AUTO, , ,AUTO
PIVCHECK,1
SFA, 14, ,INF !最外层施加无限远标志area26
ALLSEL,ALL
NSEL,S,LOC,X,0 !选择对称轴上的所有节点
DSYM,ASYM,X,0, !施加磁力线平行边界条件
ALLSEL,ALL
FLST,2,1,6,ORDE,1
FITEM,2,1
BFV,P51X,JS,,js11,, , !施加初级线圈电流密度
FLST,2,1,6,ORDE,1
FITEM,2,2
BFV,P51X,JS,,js2,, , !施加次级线圈电流密度
ALLSEL,ALL
/SOL
/STATUS,SOLU
SOLVE !求解
*SET,n11,node(0,0,0) !定义中心点坐标为n11
*GET,b0,NODE,n11,B,SUM !提取中心点坐标的磁场强度值,放入b0中
FINISH
[ 本帖最后由 infrom 于 2008-7-29 10:07 编辑 ] |